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IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package

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IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package

IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package
IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package

Ampliación de imagen :  IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package

Datos del producto:
Lugar de origen: Porcelana
Nombre de la marca: Infineon
Certificación: CE, GCF, ROHS
Número de modelo: IRF5305PBF
Pago y Envío Términos:
Cantidad de orden mínima: 1
Precio: negotiable
Detalles de empaquetado: Empaquetado en la bandeja original en primer lugar, luego Carton, al final de la bolsa de burbujas p
Tiempo de entrega: 3-5 días hábiles después de recibir el pago
Condiciones de pago: T/T, Unión Occidental,
Capacidad de la fuente: 1000PCS por mes
Descripción detallada del producto
Tipo: MÓDULO IGBT paquete: nuevo y originalF00R12KT4: Módulo IGBT de 1200 V 200 A, VCE bajo (sat), alta resistencia al cortocir
Condición: Nuevo y Original Estado libre de plomo: Cumple con RoHS
Envío por: DHL\UPS\Fedex\EMS\HK Post,DHL,UPS,Fedex y EMS

IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package


Features

  • P-Channel Enhancement Mode – Simplifies high-side switching without requiring a charge pump or level shifter.

  • -55V Drain-Source Voltage (Vdss) – Suitable for 12V, 24V, and 48V automotive and industrial bus systems.

  • -31A Continuous Drain Current (Id) – Handles moderate to high current loads safely.

  • 65mΩ Max Rds(on) – Low conduction loss improves efficiency and reduces heat generation.

  • Logic-Level Gate Drive – Fully enhanced with Vgs = -5V to -10V, compatible with 3.3V/5V microcontrollers.

  • Fast Switching Speed – Low gate charge (Qg = 63nC typical) minimizes switching losses in PWM applications.

  • RoHS-Compliant & Lead-Free – "PBF" suffix indicates environmentally friendly, lead-free terminations.

 

Applications 

  • Reverse Polarity Protection – Protects DC input circuits from accidental battery reversal in automotive and portable devices.

  • Battery Management Systems (BMS) – High-side disconnect for Li-ion, LiFePO4, and lead-acid battery packs.

  • Load Switches – Enables/disables power to modules, sensors, or peripheral circuits in embedded systems.

  • DC Motor Control – Low-frequency PWM speed control for small brushed motors (power tools, pumps, fans).

  • Power Supply Selection – Switches between primary and backup batteries or AC adapter inputs.

  • LED Driving – High-side dimming control for automotive lighting, signage, and industrial lamps.

  • Solar Charge Controllers – Disconnect function for panels or batteries in low-power off-grid systems.

 

Description

The IRF5305PBF is a P-Channel power MOSFET utilizing advanced HEXFET® technology. Housed in a industry-standard TO-220 package, it is designed for high-efficiency switching applications requiring low on-state resistance and fast switching performance. With a drain-source voltage rating of -55V and continuous drain current of -31A, this device is ideal for load switching, battery protection, and power management circuits where a positive ground or high-side P-channel switch is preferred. The logic-level gate drive simplifies interface with microcontrollers and low-voltage control circuits.

 

INFORMATION

category
Discrete semiconductor products
Transistors
FACT,MOSFET
单 DONE,MOSFET
Vgs(th) for different IDs (maximum)
4V @ 250µA
manufacturer
Infineon Technologies
Gate charge (Qg) at different Vgs (max)
63 nC @ 10 V
series
HEXFET®
Vgs (max)
±20V
Packaging
Pipe fittings
Input Capacitance (CIS) at Different Vds (Max)
1200 pF @ 25 V
Part status
On sale
Power Dissipation (Max)
110W(Tc)
FET type
P channel
Operating temperature
-55°C ~ 155°C(TJ)
Technology
MOSFETs (Metal Oxides)
Mounting type
Through hole
Drain Source Voltage (Vdss)
55 V
Vendor device packages
TO-220AB
Current at 25°C - Continuous Drain (ID)
31A(Tc)
Package/Enclosure
TO-220-3
Drive Voltage (Max RDS On, Min RDS ON)
10V
Base product number
IRF5305
On-resistance at different IDs and Vgs (max)
60 mOhm @ 16A, 10V

 

Drawing

IRF5305PBF P-Chan MOSFET -55V Vdss -31A Id 65mOhm Rds(on) fast switching logic level gate TO-220 package 0

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